Hardware Development and Application of Silicon Carbide and Gallium Nitride in Integrated Circuit Detection Systems
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Keywords

Silicon carbide
Gallium nitride
Integrated circuit testing system

DOI

10.26689/jera.v9i7.13636

Submitted : 2025-12-30
Accepted : 2026-01-14
Published : 2026-01-29

Abstract

Silicon carbide (SiC) and gallium nitride (GaN) are used as wide-bandgap semiconductor materials in the hardware development of integrated circuit detection systems. The impact of material characteristic differences on system performance needs to be considered, and hardware platforms should be adapted to construct a three-dimensional technology management system. In addition, interdisciplinary team collaboration, heat dissipation structure design, long-term reliability assessment and other management aspects, as well as supply chain collaboration, packaging technology selection are of great significance to research and development, and technical management can provide scientific guidance.

References

Yuan Y, 2021, Integration and Application of Gallium Nitride and Two Dimensional Materials, thesis, Beijing University of Technology.

Huang S, 2023, Design of Permanent Magnet Synchronous Motor Drive System Based on Gallium Nitride Power Devices, thesis, South China University of Technology.

Chen F, 2022, Research on Permanent Magnet Synchronous Motor Drive System Based on Gallium Nitride, thesis, China University of Mining and Technology (Jiangsu).

Yang Q, 2021, Research on Heterostructure of Gallium Nitride Based on MOCVD, thesis, Guilin University of Electronic Science and Technology.

Wang J, 2022, Silicon based GaN Micro LED and Flexible Integration, thesis, University of Chinese Academy of Sciences.

Feng C, Zeng K, Sun H, et al., 2021, Application of Gallium Nitride Semiconductor Materials in Communication Power Supply. Telecommunication Engineering Technology and Standardization, 34(7): 20–23.

Wang X, Wang J, Wang S, et al., 2021, Promoting the Innovative Development of China’s Gallium Nitride Industry based on the Global Patent Layout Characteristics of Gallium Nitride. Information and Communication Technology and Policy, 47(5): 53–59.

Yang Z, Asim A, 2024, Progress in the Application of Sapphire Substrate in Gallium Nitride Epitaxial Growth Technology. Shandong Industrial Technology, 2024(3): 33–40.

Li Q, Li Y, Wang X, et al., 2023, Microwave Gallium Nitride Schottky Diode and Its Applications. Electronics and Packaging, 23(1): 58–68.

Qi C, 2022, The Effect of Indium Doping on the Thermal Conductivity of Gallium Nitride. Jiangxi Science, 40(4): 753–757.